한국진공학회지 (Journal of the Korean Vacuum Society)
- 제4권S1호
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- Pages.138-144
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- 1995
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- 1225-8822(pISSN)
Preparaton of ECR MOCVD $SrTiO_3$ thin films and their application to a Gbit-scale DRAM stacked capacitor structure
초록
It is commonly believed that high permittivity materials will be necessary for future high density Gbit DRAMs. In a first part, we explain the choice of SrTiO3 by ECR MOCVD for Gbit-scale DRAMs. In a second part, after describing the ECR MOCVD system and presenting the requirements SrTiO3 thin films should meet for use in Gbit-scale DRAMs, the physical and electrical properties of srTiO3 thi film prepared by ECR MOCVD are then studied. A stacked capacitor technology, suitable for use in 1 Gbit DRAM, and comprising high permittivity SrTiO3 thin films prepared by ECR MOCVD at
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