E2M - 전기 전자와 첨단 소재 (Electrical & Electronic Materials)
- 제8권6호
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- Pages.727-736
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- 1995
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- 2982-6268(pISSN)
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- 2982-6306(eISSN)
저전압 EEPROM을 위한 Scaled MONOS 비휘발성 기억소자의 제작 및 특성에 관한 연구
A study on the fabrication and characteristics of the scaled MONOS nonvolatile memory devices for low voltage EEPROMs
초록
This paper examines the characteristics and physical properties of the scaled MONOS nonvolatile memory device for low programming voltage EEPROM. The capacitor-type MONOS memory devices with the nitride thicknesses ranging from 41.angs. to 600.angs. have been fabricated. As a result, the 5V-programmable MONOS device has been obtained with a 20ms programming time by scaling the nitride thickness to 57.angs. with a tunneling oxide thickness of 19.angs. and a blocking oxide thickness of 20.angs.. Measurement results of the quasi-static C-V curves indicate, after 10
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