E2M - 전기 전자와 첨단 소재 (Electrical & Electronic Materials)
- 제8권4호
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- Pages.426-433
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- 1995
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- 2982-6268(pISSN)
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- 2982-6306(eISSN)
PICTS방법에 의한 Boron이온을 주입시킨 반절연성 GaAs의 깊은준위에 관한 연구
A study on the deep levels in boron ion implanted semi-insulating GaAs by PICTS
초록
Effect of boron in GaAs have been investigated by photo induced current transient spectroscopy(PICTS). The starting material was undoped liquid encapsulated Czochralski(LEC) semi insulating GaAs and boron ion implantation at 150keV energy was conducted with dose of 10