Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)
- Volume 8 Issue 4
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- Pages.406-412
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- 1995
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- 2982-6268(pISSN)
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- 2982-6306(eISSN)
A study on the n-CdS/p-InP solar cells
n-CdS/p-InP 태양전지에 관한 연구
Abstract
A n-CdS thin films were evaporated by thermal evaporation method and their structure, optical transmission spectra and electrical characteristics were investigated. The photovoltaic characteristics of solar cells which were fabricated in optimum conditions measured. The evaporated CdS thin films showed in hexagonal structure and above 80% of optical transmission spectra regardless of impurity doping. The high quality thin films could be obtained at 150.deg. C temperature of substrate, which is useful for solar cell window layer with low resistivity of 6*10
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