E2M - 전기 전자와 첨단 소재 (Electrical & Electronic Materials)
- 제8권3호
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- Pages.291-297
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- 1995
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- 2982-6268(pISSN)
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- 2982-6306(eISSN)
변형된 SSD법에 의한 InP결정 성장
InP crystal growth by modified SSD method
초록
The InP crystals have been grown by modified synthesis solute diffusion (SSD) method and its properties have been investigated. The crystals have been grown by lowering the crucible quartz for growth in the furnace and crystal growth rate is 1.8mm/day. The lattice constant a. of the grown crystals is 5.867.angs.. Etch pits density along growth direction of crystal changes from 3.0*10.sup 3/cm
키워드