Study on Growth and Opto-Electrical Characterization of $CdS_{1-x}Se_{x}$ Thin Film using Chemical Bath Deposition Method

CBD 방법에 의한 $CdS_{1-x}Se_{x}$ 박막의 열처리에 따른 광전기적 특성

  • Hong, K.J. (Department of Physics, Chosun University) ;
  • Choi, S.P. (Department of Physics, Chosun University) ;
  • Lee, S.Y. (Department of Physics, Chosun University) ;
  • You, S.H. (Department of Physics, Chosun University) ;
  • Shin, Y.J. (Department of Physics, Chosun University) ;
  • Lee, K.K. (Department of Physics, Chosun University) ;
  • Suh, S.S. (Department of Physics, Chosun University) ;
  • Kim, H.S. (Department of Physics, Chosun University) ;
  • Yun, E.H. (Department of Physics, Chosun University) ;
  • Kim, S.U. (Department of Physics, Chosun University) ;
  • Shin, Y.J. (Department of Physics, Jeonbuk National University) ;
  • Jeong, T.S. (Department of Physics, Jeonbuk National University) ;
  • Shin, H.K. (Department of Physics, Jeonbuk National University) ;
  • KIm, T.S. (Department of Physics, Jeonbuk National University) ;
  • Moon, J.D. (Department of Physics, DOng shin University) ;
  • Jeon, S.L. (Dong A College)
  • Published : 1995.02.28

Abstract

Polycrystalline $CdS_{1-x}Se_{x}$ thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study $CdS_{1-x}Se_{x}$ polycrystal structure using extrapolation method of X-ray diffraction patterns for the CdS, CdSe samples annealed in $N_{2}$ gas at $550^{\circ}C$ it was found hexagonal structure which had the lattice constant $a_{0}=4.1364{\AA}$, $c_{0}=6.7129{\AA}$ in CdS and $a_{0}=4.3021{\AA}$, $c_{0}=7.0142{\AA}$ in CdSe, respectively. Hall effect on these samples was measured by Van der Pauw method and then studied on carrier density and mobility depending on temperature. We measured also spectral response, sensitivity(${\gamma}$), maximum allowable power dissipation and response time on these samples.

Chemical bath deposition 방법으로 다결정 $CdS_{1-x}Se_{x}$ 박막을 세라믹 기판 위에 성장시킨 다음 온도를 변화시켜 열처리하고 X-선 회질 무늬를 측정하여 결정 구조를 밝혔다. $550^{\circ}C$로 열처리한 시료의 X-선 회절 무늬로부터 외삽법으로 구한 격자 상수는 CdS의 경우 $a_{0}=4.1364{\AA}$, $c_{0}=6.7129{\AA}$ 였으며 CdSe인 경우는 $a_{0}=4.3021{\AA}$, $c_{0}=7.0142{\AA}$ 였다. Van der Pauw 방법으로 Hall 효과를 측정하여 운반자 농도와 이동도의 온도 의존성을 연구하였다. 광전도 셀의 특성으로 스펙트럼 응답, 감도(${\gamma}$), 최대 허용 소비전격 및 응답시간을 측정하였다.

Keywords