Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
권호 표지

The Characteristics of $PbTiO_{3}-PbZrO_{3}-Pb(Ni_{1/3}Nb_{2/3})O_{3}$ Piezoelectric Thin Film Made by Sol-Gel Method

Sol-Gel 법으로 제작한 $PbTiO_{3}-PbZrO_{3}-Pb(Ni_{1/3}Nb_{2/3})O_{3}$ 압전박막의 특성

  • 윤화중 (충남대학교 자연과학대학 물리학과) ;
  • 임무열 (충남대학교 자연과학대학 물리학과) ;
  • 구경완 (영동공과대학교 전자공학과)
  • Published : 1995.11.30
Download PDF
⟨ Previous Next ⟩

Abstract

In order to fabricate the piezoelectric thin film of the PZT-PNN ternary compound, the metal alkoxides were used as starting materials. The electrical and crystalline properties of the thin film were evaluated. The X- RD study shows that the crystallization of the film is optimized at $550^{\circ}C$ of sintering temperature. According to the D-E hysterisis curve, the coercive field is 28.8 kV /cm, and the remanent polariztion is $18.3\;{\mu}C/cm^{2}$. The break down voltages of the thin films are $76.0\;{\sim}\;27.0\;MV/m$. When the sintering temperature is raised, the break down voltage is lowered. As a result of measuring the C-V characteristic curve of the ternary compound piezoelectric thin film, the relative dielectric constants are 406 for the composition (50:40:10), 1084 for the composition (50:30:20), 723 for the composition (45:35:20) and 316 for the composition (40:40:20).

금속 alkoxide를 출발물질로 PZT-PNN 3성분계 압전박막을 제작하여, 박막의 결정성과 전기적 특성을 평가하였다. 박막의 X-RD 분석결과 $550^{\circ}C$ 소결온도에서 결정성이 가장 양호하였다. D-E 이력곡선의 관측 결과 항전계는 28.8 kV/cm, 잔유분극은 $18.3\;{\mu}C/cm^{2}$ 이었다. 박막의 진성파괴전압은 $76.0\;{\sim}\;27.0\;MV/m$이었고, 소결온도가 상승함에 따라 특성이 저하되었다. 박막의 비유전율은 조성비에 따라 (50:40:10)은 406, (50:30:20)은 1084, (45:35:20)은 723, (40:40:20)은 316이었다.

Keywords