Bulletin of the Korean Chemical Society

  • 제15권1호
  • /
  • Pages.79-83
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  • 1994
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  • 0253-2964(pISSN)
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  • 1229-5949(eISSN)
대한화학회 (Korean Chemical Society)
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Investigation of Initial Formation of Aluminum Nitride Films by Single Precursor Organometallic Chemical Vapor Deposition of$[Me_{2}Al(\mu-NHR)]_{2}\;(R=^{i}Pr,\;^{t}Bu)$

  • Sung Myung Mo (Inorganic Materials Division, Korea Research Institute of Chemical Technology) ;
  • Jung Hyun Dam (Department of Chemistry, Korea Advanced Institute of Science and Technology) ;
  • Lee June-Key (Department of Chemistry, Korea Advanced Institute of Science and Technology) ;
  • Kim Sehun (Department of Chemistry, Korea Advanced Institute of Science and Technology) ;
  • Park Joon T. (Inorganic Materials Division, Korea Research Institute of Chemical Technology) ;
  • Kim Yunsoo (Department of Chemistry, Korea Advanced Institute of Science and Technology)
  • 발행 : 1994.01.20
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초록

The organometallic chemical vapor deposition of single precursors, $[Me_2Al({\mu}-NHR)]_2\;(R=^iPr,\;^tBu)$, for alumininum nitride thin films has been investigated to evaluate their poroperties as potential precursors. In chemical vapor deposition processes the gas phase products scattered from a Ni(100) substrate were analyzed by mass spectrometry and the deposited films were characterized by X-ray photoelectron spectroscopy (XPS). The optimum temperatures for the formation of AlN films have been found to be between 700 K and 800 K. Carbon contamination of the films seems to be attributed mainly to the methyl groups bonded to the aluminum atoms. It is apparent that $^tBu$ group is better than $^iPr$ group as a substituent on the nitrogen atom of the single precursors for the AlN thin film formation.

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참고문헌

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피인용 문헌

  1. Chemical approaches to the Metalorganic CVD of Group‐III Nitrides vol.1, pp.3, 1994, https://doi.org/10.1002/cvde.19950010302
  2. Alternative precursor systems for the MOCVD of aluminium nitride and gallium nitride vol.6, pp.3, 1994, https://doi.org/10.1002/(sici)1099-0712(199605)6:3<119::aid-amo229>3.0.co;2-7
  3. Growth of AlN and GaN Thin Films on Si(100) Using New Single Molecular Precursors by MOCVD Method vol.176, pp.1, 1994, https://doi.org/10.1002/(sici)1521-396x(199911)176:1<711::aid-pssa711>3.0.co;2-y
  4. Geometries and Relative Stabilities of AlN Four-Membered-Ring Compound Isomers: Ab initio Study vol.23, pp.2, 1994, https://doi.org/10.5012/bkcs.2002.23.2.241
  5. Preparation and properties of AlN (aluminum nitride) powder/thin films by single source precursor vol.43, pp.4, 1994, https://doi.org/10.1039/c8nj04594a