GaAs 및 AlGaAs 완충층을 이용한 GaAs MESFET 제작

GaAs MESFETs using GaAs and AlGaAs buffer layers

  • 곽동화 (한국과학기술원 전기 및 전자공학과) ;
  • 이희철 (한국과학기술원 전기 및 전자공학과)
  • 발행 : 1994.12.01

초록

GaAs and AlGaAs layers were grown by Molecular Beam Epitaxy (MBE) to fabricate hith performance GaAs MESFETs. Optimum growth temperatures were found to be 600$^{\circ}C$ from their Hall measurement data. MESFETs with the gate legth of 1${\mu}$m and the gate width of 100.mu.m were fabricated on the MBE-grown GaAs layters which has i-GaAs buffer layer and characterized. Knee volgate and mazimum transconductance of the devices were 1V, 224mS/mm, respectively. Cut-off frequency at on-wafer measuring pattern was measured to be 18 GHz. The MESFET with the 1${\mu}$m -thick i-Al$_{0.3}Ga_{0.7}$As buffer layer between nactive and i-GaAs was fabricated on order to reduce the leakage current which flows through the i-GaAs buffer layer. Its output resistance was 2.26 k${\Omega}$.mm which increased by a factor of 15 compared with the MESFET without i-Al$_{0.3}Ga_{0.7}$As buffer layer.

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