Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 31A Issue 12
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- Pages.31-37
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- 1994
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- 1016-135X(pISSN)
Selectrive chemical vapor deposition of aluminum for the metallization of high level IC
고집적회로 금속선 형성을 위한 화학증작 알루미늄의 선택적 증착
Abstract
Aluminum films were deposited by the pyrolysis of triisobutylaluminum(TIBA) in a cold wall LPCVD system for the metallization of high level IC. the selectivity on Si/SiO2 substrate and the contact resistance on submicron contacts were investigated. The carbon free aluminum film could be obtained when the aluminum film was deposited at low substrate temperature. Contact resistances of CVD Al/n+ Si contacts whose contact size was 0.5 .mu.m werre as low as 20~40.OMEGA./ea, which is 30~50% of contact resistance obtained by sputtering technique.
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