Experimental verification of steady-state nyquist theorem in MOSFETs

MOSFET에서 Steady-State Nyquist 정리의 실험적 검증

  • 송두헌 (서울대학교 반도체 공동연구소 및 전자공학과) ;
  • 민홍식 (서울대학교 반도체 공동연구소 및 전자공학과) ;
  • 박영준 (서울대학교 반도체 공동연구소 및 전자공학과)
  • Published : 1994.10.01

Abstract

To resolve thd discrepancy between the existing channel thermal noise theory of MOSFETs and a new theory called the stady-state Nyquist theorem, we have measured the channel thermal noise of specially designed MOSFETs with both uniform and nonuniform channels. the experimental results clearly show that the correct theory of the channel thermal nois in MOSFETs should be the steady-state Nyquist theorem.

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