Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Fabrication and Characterization of GaAs/AlGaAs HEMT Device

GaAs/AlGaAs HEMT소자의 제작 및 특성

  • 이진희 (한국전자통신연구소 반도체연구단) ;
  • 윤형섭 (한국전자통신연구소 반도체연구단) ;
  • 강석봉 (한국전자통신연구소 반도체연구단) ;
  • 오응기 (한국전자통신연구소 반도체연구단) ;
  • 이해권 (한국전자통신연구소 반도체연구단) ;
  • 이재진 (한국전자통신연구소 반도체연구단) ;
  • 최상수 (한국전자통신연구소 반도체연구단) ;
  • 박철순 (한국전자통신연구소 반도체연구단) ;
  • 박형무 (한국전자통신연구소 반도체연구단)
  • Published : 1994.09.01
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Abstract

We have been successfully fabricated the low nois HEMT device with AlGaAs and GaAs structure. The epitazial layer with n-type AlgaAs and undoped GaAs was grown by molecular beam epitaxy(MBE) system. Ohmic resistivity of the ource and drain contact is below 5${\times}10^{6}{\Omega}{\cdot}cm^{2}$ by the rapid thermal annealing (RTA) process. The ideality factor of the Schottky gate is below 1.6 and the gate material was Ti/Pt/Au. The HEMTs with 0.25$\mu$m-long and 200$\mu$m-wide gates have exhibited a noise figure of 0.65dB with associated gain of 9dB at 12GHz, and a transconductance of 208mS/mm.

Keywords