Journal of the Korean Institute of Telematics and Electronics A (์ ์๊ณตํํ๋ ผ๋ฌธ์งA)
- Volume 31A Issue 8
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- Pages.72-79
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- 1994
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- 1016-135X(pISSN)
The Threshold Voltage and the Effective Channel Length Modeling of Degraded PMOSFET due to Hot Electron
Hot electron์ ์ํ์ฌ ๋ ธ์ ํ๋ PMOSFET์ ๋ฌธํฑ์ ์๊ณผ ์ ํจ ์ฑ๋๊ธธ์ด ๋ชจ๋ธ๋ง
Abstract
In this paper semi empirical models are presented for the hot electron induced threshold voltage shift(
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