전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제31A권8호
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- Pages.72-79
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- 1994
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- 1016-135X(pISSN)
Hot electron에 의하여 노쇠화된 PMOSFET의 문턱전압과 유효 채널길이 모델링
The Threshold Voltage and the Effective Channel Length Modeling of Degraded PMOSFET due to Hot Electron
초록
In this paper semi empirical models are presented for the hot electron induced threshold voltage shift(
키워드