Hot electron에 의하여 노쇠화된 PMOSFET의 문턱전압과 유효 채널길이 모델링

The Threshold Voltage and the Effective Channel Length Modeling of Degraded PMOSFET due to Hot Electron

  • 홍성택 (시립 인천대학교 전자공학과) ;
  • 박종태 (시립 인천대학교 전자공학과)
  • 발행 : 1994.08.01

초록

In this paper semi empirical models are presented for the hot electron induced threshold voltage shift(${\Delta}V_{t}$) and effective channel shortening length (${\Delta}L_{H}$) in degraded PMOSFET. Trapped electron charges in gate oxide are calculated from the well known gate current model and ΔLS1HT is calculated by using trapped electron charges. (${\Delta}L_{H}$) is a function of gate stress voltage such as threshold voltage shift and degradation of drain current. From the correlation between (${\Delta}L_{H}$) has a logarithmic function of stress time. From the measured results, (${\Delta}V_{t}$) and (${\Delta}L_{H}$) are function of initial gate current and device channel length.

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