한국세라믹학회지 (Journal of the Korean Ceramic Society)

  • 제31권10호
  • /
  • Pages.1115-1122
  • /
  • 1994
  • /
  • 1229-7801(pISSN)
  • /
  • 2234-0491(eISSN)
한국세라믹학회 (The Korean Ceramic Society)
권호 표지

Co-sputtering으로 형성된 ZT/PZT/ZT 강유전체 다층막 구조의 특성에 관한 연구

A Study on the Characteristics of ZT/PZT/ZT Ferroelectric Multi-layer Thin Films Deposited by Co-sputtering

  • 주재현 (서울대학교 금속공학과) ;
  • 길덕신 (서울대학교 금속공학과) ;
  • 주승기 (서울대학교 금속공학과)
  • 발행 : 1994.10.01
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초록

ZT/PZT/ZT multi-layered thin films were deposited on silicon substrate by co-sputtering method for FEMFET device application. Effects of Pb/(Zr+Ti) ratio, films thickness, annealing conditions and substrate temperature on the ferroelectric behavior of the multi-layered films were studied. The best memory device characteristics with leakage current of 2$\times$10-8 A/$\textrm{cm}^2$ and breakdown field of about 1 MV/cm could be obtained with ZT(250 $\AA$) / PZT(1000 $\AA$)/ZT(750 $\AA$) multi-layered thin film deposited at 35$0^{\circ}C$ and post-annealed at $700^{\circ}C$ for 120 sec by RTA(Rapid Thermal Annealing).

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참고문헌

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