Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
권호 표지

Effects of Ta Doping in Sputter-deposited PZT Thin Films

스퍼터링에 의해 제도된 PZT 박막에 있어서 Ta 첨가 효과

  • 길덕신 (서울대학교 금속공학과) ;
  • 주재현 (서울대학교 금속공학과) ;
  • 주승기 (서울대학교 금속공학과)
  • Published : 1994.08.01
Download PDF
⟨ Previous Next ⟩

Abstract

Ta doped PZT thin films were prepared by a reactive sputtering method with a 3-gun magnetron co-sputter, and effects of Ta doping on physical and electrical properties of the films were studied. Within the doping range of 0 to 3.6 at%, Ta doping enhanced the crystallographic orientation of (110), but reduced that of (100). Ta doped PZT had a larger grain size of about 20 ${\mu}{\textrm}{m}$ compared with that of 5 ${\mu}{\textrm}{m}$ for un-doped PZT. Pits and holes of PZT films which used to appear with annealing at high temperature due to evaporation of PbO were much suppressed with addition of Ta. The leakage current could be reduced down to 1.27$\times$10-8 A/$\textrm{cm}^2$ and the charge storge density as large as 25.8$\mu$C/$\textrm{cm}^2$ was obtained.

Keywords

References

  1. J. Electronic Materials v.21 no.5 Annealing of Lead Zirconate Tita-nate (65/35) Thin Films for Ultra Large Scale Intergra-tion Storage Dielectric Application;Phase Transfor-mation and electrical Characteristics C.H. Chkarmane;J. Kim;C. Sudhama;J. Lee;A. Tasch;S. Novak
  2. J. Vac. Sci. Technol. A v.10 no.1 Ferroelectric Lead Zirconate Titanate Thin Films by Radio Frequency Magnetron Sputtering E.S.Ramarkrishnan;W.Y.Howng
  3. Ferroelectrics v.112 Process Optimization and Characterization of Device Worthy Sol-Gel based PZT for Ferroelectric Memories B.M. Melnick;J.D. Cuchiaro;L.D. Macmillian;C.A. Paz de Arauujo;J.F. Scott
  4. Ceramic Transactions v.25 Deposition and Characterization of Thin Film Ferroelectric PZT phases by PLASMA Assisted CVD D.A. Richardson;C.J. Cuo;S.K. Dey;W.T. Petus-key
  5. Ferroelectrics v.116 Pulsed Laser Deposition of Oriented $Pb(Zr_{0.54}Ti_{0.46})O₃$ K.S. Grabowski;J.S. Horwitz;D.B. Chisey
  6. Mat. Res. Soc. Symp. Proc. v.301 Correlations Among Degrations Lead Zirconate Titanate Thin Film Capaci-tors L.K. Yoo;S.B. Desu;J. Xing
  7. Ferroelectrics v.116 Charge Motion in Feroelectric Thin Fi-lms D.M. Smyth
  8. Mat. Res. Soc. Symp. Proc. v.200 Effect of Thermal Proceesing Conditions on Ferroelectric PZT Thin Films C.K. Kwok;S. Desu;L. Kammerdiner
  9. Mat. Res. Soc. Symp. Proc. v.243 Role of Oxygen Vacancies on the Ferroelectric Properties of PZT Thin Films C.K. Kwok;S. Desu
  10. Mat. Res. Soc. Symp. Proc. v.301 Electrical Properties of Sol-Gel PZT Thin Films for Decoupling Capacitors Applications R.W. Schwartz;D. Dimons;S.J. Lockwood;V.M. Toress
  11. J. Appl. Phys. v.70 no.1 Quantitative Measurement of Space Charge effects in Lead Zirconate Tetanate Memories J.F. Scott;C.A. Aruojo;B.M. McMillan;R. Juleeg
  12. J. Electronic Materials v.21 no.10 Sol-Gel Processing of Nb-Doped Pb(Zr, Ti)O₃Thin Films for Ferroclectric Memory applications D.F. Ryder Jr.;N.K. Raman
  13. J. Am. Ceram. Soc. v.74 no.6 Microstructure of Solution-Processed Lead Zi-rconate Titanate(PZT) Thin Films A.H. Carim;B.A. Tuttle;D.H. Doughty;S.L. Mar-tinez
  14. Mat. Res. Soc. Symp. Proc. v.243 Analysis of Pt/Ti electro-des for PLZT capacitors J.O. Olowolafe;R.F. Jones;A.C. Campbell;P.D. Maniar;R.I. Hedge;C.J. Mogab
  15. Mat. Res. Soc. Symp. Proc. v.310 Epitaxial Ferroelectric Hetrost-ructures of isotropic Metallic Oxide(SrRuO₃)and $Pb(Zr_{0.52}Ti_{0.48})$ C.B. Eom;R.B. Van Dover;J.M. Phillips;R.M. Flem-ing;R.J. Cava(et al.)
  16. 한국요업학회지 v.30 no.4 스퍼터링으로 제조한 새로운 완충막 위의 PZT 박막 특성에 관한 연구 주재현;주승기
  17. J. Appl. Phys. v.64 no.3 Characterization of Pb(Zr, Ti)O₃Thin Films Deposited From Multi-Element Metal Targets K. Sreenivas;M. Sayer
  18. J. Appl. Phys. v.70 no.1 Variarion of Ferroelectric characteristics of Lead Zirconate Tinate Ceramics Due to Minor Chemical Modufications R. Gerson