Formation Mechanism and Corrosion-Resistance of Magnesium Film by Physical Vapour Deposition Process

물리증착법에 의해 제작한 마그네슘 박막의 형성기구와 내식특성

Mg thin films were prepared on SPCC(cold-rolled steel) substrates by vasuum evapoaration and ion-plating. The influence of argon gas pressure and substrates bias voltage on the crystal orientation and morphology of the film was determined by using X-ray diffraction and scanning electron micrography (SEM), respectively. And the effect of crystal orientation and morphology of the Mg thin films on corrosion behavior was estimated by measuring the anodic polarization curves in deaerated 3% NaCl solution. The crystal orientation of the Mg films deposited at high argon gas pressure exhibited a (002) preferred orientation, regardless of the substrate bias voltage. Film morphology changed from a columnar to a granular structure with the increase of argon gas pressure. The morphology of the films depended not only on argon gas pressure but also bias voltage ; i.e., the effect of increasing bias voltage was similar to that of decreasing argon gas pressure. The influences of argon gas pressure and bias voltage were explained by applying the adsorption inhibitor theory and the sputter theory. And also, this showed that the corrosion resistance of the Mg thin films can be changed by controlling the crystal orientaton and morphology.