플라즈마 CVD에 의한 고전압 비정질 실리콘 박막 트랜지스터의 제작

Fabrication of High Voltage a-Si:H TFT Plasma Chemical Vapor Deposition

We studied the fabrication and electrical characteristics of high voltage hydrogenerated amorphous silicon thin film transistor using plasma enchanced chemical vapor deposition(PECVD). The device shows 2500${\AA}$ SiOS12T, 400-1500${\AA}$ a-Si tickness, 350V output voltage and 9.55${\times}$10S04T average on/off current ratio. We found that the leakage current of high voltage TFT occurred 0-70V drain voltage. As the leakage current depend on the a-Si thickness, the leakage current of high voltage TFT decreased by reduction of the a-Si thickness.