대한전기학회논문지 (The Transactions of the Korean Institute of Electrical Engineers)
- 제43권2호
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- Pages.244-250
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- 1994
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- 0254-4172(pISSN)
고속 스윗징을 위한 새로운 GTO 구동기법
A New GTO Driving Technique for Faster Switching
초록
This paper presents the design of a new turn-off gate drive circuit for GTO which can accomplish faster turn-off switching. The major disadvantage of the conventional turn-off gate drive technique is that it has a difficulty in realizing high negative diS1GQT/dt because of VS1RGM(maximum reverse gate voltage) and stray inductances of turn-off gate drive circuit[1~2]. The new trun-off gate drive technique can overcome this problem by adding another turn-off gate drive circuit to the conventional turn-off gate drive circuit. Simulation and experimental results of the new turn-off gate drive circuit in conjunction with chopper circuit verify a faster turn-off switching performance.
키워드