ETRI Journal

  • 제16권3호
  • /
  • Pages.1-10
  • /
  • 1994
  • /
  • 1225-6463(pISSN)
  • /
  • 2233-7326(eISSN)
한국전자통신연구원 (Electronics and Telecommunications Research Institute)
권호 표지

Growth of GaAs by Chemical Beam Epitaxy Using Unprecracked Arsine and Trimethylgallium

  • 발행 : 1994.10.31
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

Undoped GaAs has been successfully grown by chemical beam epitaxy (CBE) via surface decomposition process using arsine $(AsH_3)$ and trimethylgallium (TMG). Three distinct regions of temperature-dependent growth rates were identified in the range of temperatures from 570 to $690^{\circ}C$. The growth rates were found strongly dependent on the V/III ratio between 5 and 30. The growth rate at low V/III ratio seems to be determined by arsenic produced on the surface, whereas at high V/III ratio it shows dependence on the adsorption of TMG. Hall measurement and photoluminescence (PL) analysis show that the films are all p-type and that carbon impurities are primarily responsible for the background doping. Carbon concentrations have been found to be reduced by two orders of magnitude as compared to those of epilayers grown by CBE which employs TMG and arsenic obtained from precracked $AsH_3$ in a high temperature cell. It was also found that hydrogen atoms dissociated from unprecracked $AsH_3$ play an important role in removing hydrocarbon-containing species resulting in a significant reduction of car-bon impurities.

키워드

참고문헌

  1. Appl. Phys. Lett. v.38 no.9 On the use of $AsH_3$ in the molecular beam epitaxial growth of GaAs Calawa, A.R.
  2. J. Cryst. Growth v.95 no.1-4 Very high purity GaAs grown by gas source molecular beamepitaxy Cunningham, J.E.;Trimp, G.;Chiu, T.H.;Ditzenberger, J.A.;Tsang, W.T.;Sergent, A.M.;Lang, D.V.
  3. Appl. Phys. Lett. v.33 no.12 Effect of $H_2$ on residual impurities in GaAs MBE layer Calawa, A.R.
  4. J. Cryst. Growth v.111 no.1-4 GSMBE growth of GaAs at low $AsH_3$ cracking temperatures Hafich, M.J.;Lee, H.Y.;Silvestre, P.;Robinson, G.Y.
  5. J. Cryst. Growth v.55 no.1 Metalorganic CVD of GaAs in a molecular beam system Veuhoff, E.;Pletschen, W.;Balk, P.;Luth, H.
  6. J. Vac. Sci. Tech v.B3 no.2 GaAs growth in metal-organic MBE Putz, N.;Veuhoff, E.;Heineke, H.;Heyen, M.;Luth, H.;Balk, P.
  7. J. Cryst. Growth v.74 no.2 A comparative study of $Ga(CH_3)_3\;and\;Ga(C_2H_5)_3$ in the MOMBE of GaAs Putz, N.;Heineke, H.;Heyen, M.;Balk, P.;Weyers, M.;Luth, H.
  8. J. Cryst. Growth v.105 no.1-4 Substituted arsines as As sources in MOMBE Musolf, J.;Weyers, M.;Balk, P.;Zimmer, M.;Hofmann, H.
  9. Solid-State Elec. v.22 no.7 Surface and interface depletion corrections to free carrier-density determinations by Hall measurements Chandra, A.;Wood, C.E.C.;Woodard, D.W.;Eastman, L.
  10. J. Cryst. Growth v.105 no.1-4 Carbon doping of III-V compounds grown by MOMBE Abernathy, C.R.;Pearton, S.J.;Ren, F.;Hobson, W.S.;Fullowan, T.R.;Katz, Z.;Jordan, A.S.;Kovalchik, J.
  11. J. Cryst. Growth v.105 no.1-4 Metallic p-type GaAs and In-GaAs grown by MOMBE Konagai, M.;Yamada, T.;Akatsuka, T.;Nozaki, S.;Miyake, R.;Saito, K.;Fukamachi, T.;Tokumitsu, E.;Takahashi, K.
  12. Mat. Res. Soc. Symp. Proc. v.240 Chemical beam epitaxial growth of GaAs epilayer on GaAs(100) substrate using un-precracked arsine and trimethylgallium Park, S.J.;Sim, J.K.;Ro, J.R.;Yoo, B.S.;Park, K.H.;Lee, E.H.