Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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On the Study of Properties and Preparation of the $CuInS_{2}$ thin films by EBE method

EBE법으로 제작한 $CuInS_{2}$ 박막 특성에 관한 연구

  • Published : 1994.02.28
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Abstract

The polycrystalline $CuInS_{2}$ thin films were prepared by annealing in vacuum and extra S supply of S/In/Cu stacked layers, which were deposited by sequential electron beam evaporation(EBE). n-type $CuInS_{2}$ was fabricated in vacuum with chalcopyrite structure and its minimum resistivity was $142{\Omega}Cm$. Also, p-type $CuInS_{2}$ was made in extra S supply with chalcopyrite structure and its minimum resistivity was $137{\Omega}Cm$.

EBE법으로 S,In과 Cu를 순차적으로 증착하여 S/In/Cu 적층막을 제작하고, 진공 및 별도 S(Sulphur)공급하면서 열처리하여 다결정 $CuInS_{2}$ 박막을 제작하였다. 진공중에서 열처리한 박막은 chalcopyrite 구조를 갖는 n형 $CuInS_{2}$ 이었고 이때 최저 저항율은 $142{\Omega}Cm$이었다. 또한 별도 S 공급하면서 열처리한 박막은 p형으로 chalcopyrite 구조를 갖고 성장되었으며 최저 저항율은 $137{\Omega}Cm$ 이었다.

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