Structural and Electrical Properties of $CuInS_{2}$ Thin Films

$CuInS_{2}$ 박막의 구조 및 전기적 특성

Single-phase $CuInS_{2}$ thin film were prepared by E-beam deposition and the effects of its annealing were investigated. The S/In/Cu was stacked from S, In and Cu by EBE method and then, In the nitrogen atmosphere, the stacked layer were annealed to convert chalcopyrite $CuInS_{2}$ thin films. and that result we obtained p-type Chalcopyrite $CuInS_{2}$ thin films, Its resistivity was $0.03{\sim}0.007{\Omega}cm$, Hall mobility was $0.07{\sim}0.1cm^{2}V^{-1}S^{-1}$ and Hall concentration was $10^{20-21}cm^{-3}$, respectively.

Single-phase $CuInS_{2}$ 박막을 제작하고 열처리에 따른 특성을 분석하였다. 박막제작은 S, In 및 Cu를 차례로 적층시킨 다음 질소분위기에서 열처리를 하여 Chalcopyrite 구조인 $CuInS_{2}$ 박막으로 전환시켰다. 제작된 박막은 p-형이었고 저항률은$0.03{\sim}0.007{\Omega}cm$였으며, Hall 이동도는 $0.07{\sim}0.1cm^{2}V^{-1}S^{-1}$ 그리고 Hall 농도는 $10^{20-21}cm^{-3}$이었다.