Fabrication and Characteristics of SAW Gas Sensor

SAW 가스센서의 제작 및 특성

$112^{\circ}$ rot. x-cut $LiTaO_{3}$ wafer was used as the substrate of SAW gas sensor. Dual delay line SAW device with IDTs which consist of the reference delay line and the sensing delay line was fabricated using photolithigraphy. Each IDTs had 10 finger pairs and finger spacing is 10 microns. One delay line channel is the reference, while the second is the sensing channel with Pb-phthalocyanine film in the propagation path. Pb-phthalocyanine film which is p-type organic semiconductor was evaporated in $10^{-5}$ torr vacuum using shadow mask selectively. Dual delay line oscillator was constructed by using the rf amplifier and AGC. Frequency of the IDTs had the range of $87{\sim}$89 MHz oscillation frequency. Oscillation frequency shifts were investigated as a function of the temperature and the concentration of $NO_{2}$ gas.

SAW 가스센서의 기판으로 $112^{\circ}$ rot. x-cut $LiTaO_{3}$ 기판을 사용하였고, 사진식각법으로 reference delay line과 sensing delay line으로 구성된 dual delay line SAW소자를 제작하였다. 각각의 IDT는 전극의 폭이 $10{\mu}m$이고, 10 개의 전극쌍을 갖는다. 각각 두개의 delay line 중에서 reference delay line은 감지막을 증착시키지 않고, sensing delay line은 유기물 반도체의 일종인 Pb-프탈로시아닌을 shadow mask로써 $10^{-5}$torr의 진공하에서 선택적으로 증착시켰다. 제작된 SAW소자로 rf amp.와 AGC(Auto Gain Control)를 사용하여 dual delay line oscillator를 만들었다. 이때 발진주파수는 $87{\sim}$89 MHz였다. 온도와 $NO_{2}$ 가스농도의 변화에 따른 발진주파수의 변화를 조사하였다.