Journal of the Korean Vacuum Society (한국진공학회지)
- Volume 2 Issue 2
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- Pages.171-180
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- 1993
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- 1225-8822(pISSN)
XPD Analysis on the Cleaved GaAs(110) Surface
절개된 GaAs(110) 면의 XPD 분석
- Lee, Deok-Hyeong (Department of Physics, Seoul National University) ;
- Jeong, Jae-Gwan (Department of Physics, Seoul National University) ;
- O, Se-Jeong (Department of Physics, Seoul National University)
- Published : 1993.06.01
Abstract
X-ray photoelectron diffraction (XPD) is used to characterize the crystallographically cleaved GaAs(110) surface. By using polar and azimuthal scans of the usual angle-resolved x-ray photoelectron spectroscopy, we get the reconstruction geometry of the clean GaAs(110) surface from the intensity ratio of Ga 3d core-level peaks. The reconstruction parameters are determined by fitting the diffraction pattern with the single scattering cluster (SSC) model, and the results show similar tendencies to those obtained by other techniques.
X-선 광전자 분광법(XPD)을 이용하여 GaAs(110) 절개면의 결정구조를 이해하였다. 각분해 X-선 분광법으로 GaAs(110) 면의 내각준위 Ga 및 As 3d의 스펙트럼을 얻어, 이 내각 준위의 세기 비율(intensity ratio)의 방위각과 편각에 따른 변화를 SSC(Single Scattering Cluster) 모델에서 얻은 회절패턴으로 곡선분석(fitting)하여 절개면의 재구성 구조(reconstruction geometry)를 얻었다. 이 절개면의 재구성된 값은 다른 실험의 결과와 비슷하였다.
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