Journal of the Korean Vacuum Society (한국진공학회지)
- Volume 2 Issue 2
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- Pages.161-165
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- 1993
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- 1225-8822(pISSN)
Epitaxial Growth of Ge on Si(100) and Si(111) Surfaces
Si(100)와 Si(111) 표면의 Ge 에피 성장 연구
- Khang, Yun-Ho (Department of Physics, Seoul National University) ;
- Kuk, Young (ISRC, Seoul National University)
- Published : 1993.06.01
Abstract
The geometrical and electronic structure of epitaxially grown Ge on Si(100) and Si(111) surfaces has been studied by scanning tunneling microscopy. Since Ge atoms could be distinguished from Si atoms by scanning tunneling spectroscopy and voltage dependent STM images, the growth mode of the added layer could be studied. On the (100) surface with a (2
Si(100)와 Si(111) 표면에 에피 성장시킨 Ge의 기하학적, 전기적 구조가 scanning tunneling microscope로 연구되었다. Ge 원자는 scanning tunneling spectroscopy와 bias 전압을 달리한 STM 상에서 Si 원자와 구별되었다. 이것을 이용하여 Ge의 성장 형태를 연구하였다. (2
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