전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제30A권12호
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- Pages.43-50
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- 1993
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- 1016-135X(pISSN)
해석모델을 이용한 3차원 이온주입 시뮬레이터 개발
Development of Three-Dimensional Ion Implantation Simulator Using Analytical Model
초록
Three-dimensional simulator for the ion implantation process is developed. The simulator based on an analytical model which would be a choice with high computational efficiency and accuracy. This is an important issue for the simulation of a numerous number of processing steps required in the fabrication of ULSI or GSI. The model can explain scattering and bulk channeling mechanism (1D). It can also explain depth dependent lateral diffusion effect(2D) and mask effect(3D). The model is consist of one-dimensional JPD(Joined Pearson Distribution) function and two-dimensional modified Gaussian functions. Final implanted profiles under typical mask structures such as hole, line and island structure are obtained with varying ion species.
키워드