Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 30A Issue 11
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- Pages.122-131
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- 1993
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- 1016-135X(pISSN)
Simulation of Submicron MOSFET Using Hydrodynamic Model
Hydrodynamic model을 이용한 Submicron MOSFET의 Simulation
Abstract
In this paper, we have developed a submicron Si MOSFET simulator, which is physically based on the hydrodynamic energy transport mode. The simulator was used to investigate the nonstationary transport effects and the transient phenomena in submicron Si MOSFET's. It is found that the velocity overshoot and the carrier heating are dominant transport mechanism near the drain end of the channel and the transient phenomena is more retained in a long channel MOSFET.
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