Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 30A Issue 9
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- Pages.38-45
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- 1993
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- 1016-135X(pISSN)
The Characteristics of Degraded Drain Output Resistance of NMOSFET due to Hot Electron Effects
Hot electron 효과로 노쇠화된 NMOSFET의 드레인 출력저항 특성
Abstract
In this study, the degradation characteristics of drain output resis-tance was described due to hot electron effects. An semi-empirical model for the degraded drain output resistance was derived from the measured device characteristics. The suggested model was verified from the measured data and the device parameter dependence was also analyzed. The degradation of drain output resistance was increased with stress time and had linear relationship with the degradation of drain current. The device lifetime which was defined by failure criteria of drain output resistance (such as
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