The 607nm GaInP/AlInP Distributed Bragg Reflector Visible Laser Grown by Gas source Molecular Beam

GSMBE에 의한 단파장 GaInP/AIInP DBR 반도체 레이저 제작 및 특성

The 607 nm GaInP/AlInP distributed bragg reflector (DBR) lasers using the second order gratings period of 184.7 nm were fabricated by gas source molecular beam epitaxy (GSMBE) and the conventional holographic method. GaInP/AlInP DBR lasers show single mode operations up to 1.8 times the threshold currents with a wavelength of 607 nm at 140 K and a wavelength shift of 0.033 nm/K is observed. No mode hopping was found in the temperature ranging from 120 to 165K.