전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제30A권8호
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- Pages.81-87
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- 1993
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- 1016-135X(pISSN)
MBE 장치에 의한 에피 성장 두께 균일도 계산
Calculations of Thickness Uniformity in Molecular Beam Epitaxial Growth
초록
The growth thickness uniformity of epitaxial layers deposited using a moiecular beam epitaxy system is calculated from the arrangement of molecular beam source and the substrate and the geometric dimensions of the crucible in order to predict the optimum design conditions of the prototype MBE system. The thickness uniformity better than 5% over a 3-inch wafer can be obtained by keeping the distance between the substrate and the crucible's orifice longer than 20cm, the tapering angle of the crucible larger than 6
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