전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제30A권8호
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- Pages.72-80
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- 1993
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- 1016-135X(pISSN)
0.3 um급 Inverse-T Gate 모스와 LDD 모스의 전류구동력 및 신뢰성 특성비교
Characterization of Current Drivability and Reliability of 0.3 um Inverse T-Gate MOS Compared with Those of Conventional LDD MOS
초록
We fabricated 0.3um gate length inverse-T gate MOS(ITMOS) and conventional lightly doped drain oxide spacer MOS(LDDMOS), and studied electrical characteristics for comparison. Threshold voltage of 0.3um gate length device was 0.58 V for ITMOS and 0.6V for LDDMOS. Measured subthreshold characteristics showed a slope of 85mV/decades for both ITLDD and LDDMOS. Maximum transconductance at V S1ds T=V S1gs T=3.3V was 180mS/mm for ITMOS and 163mS/mm for LDDMOS respectively. GIDL current was observed to be 0.1pA/um for ITOMS and 0.8pA/um for LDDMOS. Substrate current of ITMOS as a function of drain current was found to be reduced by a foactor of 2.5 compared with that of LDDMOS.
키워드