전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제30A권7호
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- Pages.32-37
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- 1993
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- 1016-135X(pISSN)
높은 latch-up 전류특성을 갖는 트랜치 캐소드 삽입형 IGBT
A Novel Inserted Trench Cathode IGBT Device with High Latching Current
초록
A novel insulated gate bipolar transister (IGBT), called insulated trench cathode IGBT (ISTC-IGBT), is proposed. ISTC-IGBT has a trenched well with the shallow P
키워드