집적화된 실리콘 압력센서의 제작

Fabrication of Integrated Silicon Pressure Sensor

  • 발행 : 1993.06.01

초록

An integrated silicon pressure sensor with frequency output has been fabricated, measured, and tested. The standard bipolar process is applied and thin diaphragm was formed using EDP anisotropic etchant. Output frequency was 769 Hz-3.1 kHz at the pressure range of 0-10 psi. It operates at the temperature range of 0-50$^{\circ}C$. The frequency sensitivity was 233 Hz/psi and temperature sensitivity was 0.3 Hz/$^{\circ}C$. The power dissipation was 50mW.

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