Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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A Comparison of Electrical Properties by Recrystallization of Dopant-Implanted Amorphous Silicon Films

도판트가 주입된 비정질 실리콘 박막의 재결정화에 따른 전기적 성질의 비교

  • 이만형 (한양대학교 무기재료공학과) ;
  • 최덕균 (한양대학교 무기재료공학과) ;
  • 김정태 (현대전자(주) 반도체연구소)
  • Published : 1993.06.01
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Abstract

P+ and BF2+ were implanted to LPCVD amorphous silicon films deposited on thermally-oxidized silicon wafers and the low temperature annealing process followed with various conditions to activate implanted ions and to recrystallize the films. We tried to find the optimum processing condition by comparing the recrystallization behaviors and the electrical properties. TEM analysis showed that the final grain size of BF2+-implanted films was similar to that of unimplanted films, whereas the grains of P+-implanted films. For both P+ - and BF2+ -implanted films, sheet resistances were decreased with elevating annealing temperature and the minimum value was about 110~120$\Omega$/$\square$ at $600^{\circ}C$.

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