Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
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A study on the Improvement of Surface Topography in CVD Aluminum Thin Films

화학증착 알루미늄 박막의 표면 상태 개선에 관한 연구

  • 김영성 (서울대학교 대학원 금속공학과) ;
  • 이경일 (서울대학교 대학원 금속공학과) ;
  • 주승기 (서울대학교 대학원 금속공학과)
  • Published : 1993.06.01
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Abstract

Aluminum thin films were deposited on the silicon substrate by the pyrolysis of TrilsoButylAluminum (TIBA) in a cold wall LPCVD reactor. The effect of substrate on the surface topograply and the decomposition reaction was investigated. The activation energy for the decomposition of TIBA was turned out to be 1 eV from the Arrhenious plot. The surface topography of the CVD aluminum could be improved by the application of thin metal film, which was in-situ deposited on the silicon prior to CVD process.

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