Zn-Ti-Ni-O 반도성 세라믹스의 PTCR 현상

The PTCR Effect of Semiconducting Zn-Ti-Ni-O Ceramics

  • 고일영 (서울대학교 무기재료공학과) ;
  • 최승철 (아주대학교 재료공학과) ;
  • 김환 (서울대학교 무기재료공학과)
  • 발행 : 1993.08.01

초록

Semiconducting Zn-Ti-Ni-O and Zn-Ti-O system were investigated. The specimens sintered at the temperature between 125$0^{\circ}C$ and 145$0^{\circ}C$ exhibited PTCR effect between -5$0^{\circ}C$ and 35$0^{\circ}C$ with resistivity ration exceeding three decades. Semiconducting Zn-Ti-Ni-O is consisted of two phases, one is n-type ZnO and the other is p-type spinel structure. The mechanism of PTCR effect was explained in relation to the piezoelectric property of ZnO and the residual stress caused by thermal expansion difference between two phases during cooling process.

키워드

참고문헌

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