한국결정성장학회지 (Journal of the Korean Crystal Growth and Crystal Technology)
- 제3권2호
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- Pages.149-156
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- 1993
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- 1225-1429(pISSN)
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- 2234-5078(eISSN)
일방향 응고법에 의한 단결정 Si의 결정성장에 관한 연구
Crystal Growth of Polycrystalline Silicon by Directional Solidification
초록
Si과 흑연 주형사이에 release layer로서
Polycrystalline silicon was produced from metallurgical-grade Si by unidirectional solidification. Variations of impurity concentration and resistivity in the ingots have been investigated. X-ray diffraction analysis has also been performed to examine the crystal orientation. According to the X-ray diffraction analysis on the polycrystalline silicon, preferential orientation was changed from ( 220) into ( III ) with decreasing growth rate. Also, with increasing growth rate and fraction solidified, the resistivity tends to decrease.
키워드