TSSG 법에 의한 KTP 단결정 성장의 실험적 연구

An Experimental Study of KTP Crystal Growing by TSSG Method

K6P4Ol3 응제를 사용하여 TSSG법에 의해 KTP(K Tiop04) 단결정을 성장시켰다. 가열로의 내부에 heatpipe와 복사방열판을 설치하여 도가니 내의 온도 안정성 및 균일도를 향상시켰다. 크고 양질의 단결정을 얻기 위한 목적으로 조업온도 구간,초기 냉각속도, 강제교반, 융제의 재사용과 같은 몇 가지 조업변수들에 따른 영향을 비교 고찰하였다. 본 융제의 조건하에서(0.6g KTP/lg flux), 초기 냉각속도가 0.1℃/hr 이하까지 느릴수록, 적절한 결정 회전이 수반될수록 양질의 단결정성장에 유리하였다. 최대 44 × 39 ×17체 크기의 KTP단결정을 얻을 수 있었으며, 단순가공 상태하에서도 21.3% SHG 변환효율을 나타내었다.

KTP(KTiOPO4) single crystals were grown by the TSSG(top seeded solution growth) method using the Ksp401s flux. A heat-pipe based growing furnace was used, and the temperature stability and the homogenity of the growing solution in the platinum crucible were within the level of It 0.5℃ and ±0.9℃, respectively. The effects of some operating variables such as operating temperature range, initial cooling rate, forced stirring, reuse of the flux were investigated. As the initial cooling rate was decreased to the degree of 0.1℃/hr and some proper stirring effect by the crystal rotation was introduced to the present experimental condition, bigger and better crystals without inclusion grew. A single crystal with the maximum sixte of 44 ×39 ×17mm3 was obtained and showed the SHG conversion efficiency of 21.39) even without the anti-refilection coating.