Transactions of the Korean hydrogen and new energy society (한국수소및신에너지학회논문집)

The Korean Hydrogen and New Energy Society (한국수소및신에너지학회)
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Characteristics of Hydrogenation and Electronic Properties of Thin Film Y-Hx

  • Cho, Young-Sin (Department of Physics, Kangwon National University) ;
  • Jee, Chan-Soo (Department of Science Education, Kangwon National University) ;
  • Kim, Sun-Hee (Department of Science Education, Kangwon National University) ;
  • Yoon, Jong-Hwan (Department of Physics, Kangwon National University)
  • Published : 1992.12.31
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Abstract

Thin Film yttrium, 500 nm thick, was prepared by electron beam evaportion on sapphire substrate. Film was hydrogenated at room temperature upto 1 bar hydorgen pressure without any activation process. Electrical resistivity was measured by four-point DC method in the temperature range between room temperature and 30 K for various hydorgen concentration x = 0 to 2.924 of $YH_x$ sample. Temperature dependent resistance of $YH_{2\;924}$ shows low temperature minmum at 105K ($36{\mu}{\Omega}cm$ deep), the metal-semiconductor transition at 260K, and a hysteresis, which are similar behavior to bulk $YH_x$(x>2) experimental results.

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