Analytical Science and Technology (분석과학)
- Volume 5 Issue 2
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- Pages.199-202
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- 1992
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- 1225-0163(pISSN)
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- 2288-8985(eISSN)
SIMS analysis of the behavior of boron implanted into single silicon during the Ti-silicide formation
Ti-silicide 박막 형성시 규소 기판에 이온 주입된 붕소 거동에 대한 SIMS 분석
- Hwang, Yoo Sang (Dept. of Material Eng. Hanyang Univ.) ;
- Paek, Su Hyon (Dept. of Material Eng. Hanyang Univ.) ;
- Cho, Hyun Choon (Dept. of Electronics and Electical, KINITI) ;
- Mah, Jae Pyung (Dept. of Electronic Eng. Honam College) ;
- Choi, Jin Seog (Dept. of Material Eng. Hanyang Univ.) ;
- Kang, Sung Gun (Dept. of Material Eng. Hanyang Univ.)
- 황유상 (한양대학교 재료공학과) ;
- 백수현 (한양대학교 재료공학과) ;
- 조현춘 (산업기술정보원 전자전기실) ;
- 마재평 (호남대학교 전자공학과) ;
- 최진석 (한양대학교 재료공학과) ;
- 강성건 (한양대학교 재료공학과)
- Received : 1992.04.02
- Published : 1992.06.25
Abstract
Ti-silicide was formed by using metal-Ti target and composite target on the silicon substrate that