Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 29A Issue 8
- /
- Pages.71-77
- /
- 1992
- /
- 1016-135X(pISSN)
New Tunneling Model Including both the Thermal and the Tunneling Transition through Trap
트랩을 통한 열적 천이와 터널링 천이를 동시에 고려할 수 있는 새로운 터널링 모델에 관한 연구
Abstract
According to increasing the doping concentration in p-n junction, a tunneling current through trap as well as SRH(Shockley-Read-Hall) generation-recombination current in depletion region occurs. It is the tunneling current that is a dominant current at the forward bias. In this paper, the new tunneling-recombination equation is derived. The thermal generation-recombination current and tunneling current though trap can be easily calculated at the same time because this equation has the same form as the SRH generation-recombination equation. For the validity of this equation, 2 kind of samples are simulated. The one is
Keywords