전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제29A권8호
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- Pages.49-55
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- 1992
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- 1016-135X(pISSN)
DC 반응성 스퍼터링된 TiN 박막의 구조적 및 전기적 특성
Structural and Electrical Properties of Reactively Sputtered Titanium Nitride Films
초록
We Have investigated the properties of the titanium nitrite films widely used in VLSI devices as diffusion barrier in Al-based metallization. TiN films were formed by reactive sputtering from Ti target in Ar-N
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