전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

TiN 표면위에 텅스텐의 화학증착

Chemical Vapor Deposition of Tungsten on TiN Surface

  • 이청 (포항공과대학교 화학공학과 재료공정연구실) ;
  • 이시우 (포항공과대학교 화학공학과 재료공정연구실) ;
  • 이건홍 (포항공과대학교 화학공학과 재료공정연구실)
  • Yi, Chung (Dept. of Chem. Eng., Pohang Inst. Of Sci. & Tech.) ;
  • Rhee, Shi-Woo (Dept. of Chem. Eng., Pohang Inst. Of Sci. & Tech.) ;
  • Lee, Kun-Hong (Dept. of Chem. Eng., Pohang Inst. Of Sci. & Tech.)
  • 발행 : 1992.04.01
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초록

Tungsten film was deposited on the TiN surface in a low pressure chemical vapor deposition reactor and chemical reaction mechanism between TiN surface and ($WF_{6}\;and\;SiH_{4}$ was studied. Interaction of ($WF_{6}\;or\;SiH_{4}$ with TiN surface and tungsten was deposited more easily. $WF_6$ reacted with TiN activated the TiN surface to form volatile TiF_4$ and tungsten nuclei were formed. ($SiH_{4}$ was dissociated on the TiN surface to form silicon nuclei. From RBS and AES analysis, we could not detect the impurities(such as Si or TiF$_x$)at the interface between tungsten and TiN. The adhesion at the W/TiN interface became poor when the deposition temperature was below 275$^{\circ}C$.

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