Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Chemical Vapor Deposition of Tungsten on TiN Surface

TiN 표면위에 텅스텐의 화학증착

  • Yi, Chung (Dept. of Chem. Eng., Pohang Inst. Of Sci. & Tech.) ;
  • Rhee, Shi-Woo (Dept. of Chem. Eng., Pohang Inst. Of Sci. & Tech.) ;
  • Lee, Kun-Hong (Dept. of Chem. Eng., Pohang Inst. Of Sci. & Tech.)
  • 이청 (포항공과대학교 화학공학과 재료공정연구실) ;
  • 이시우 (포항공과대학교 화학공학과 재료공정연구실) ;
  • 이건홍 (포항공과대학교 화학공학과 재료공정연구실)
  • Published : 1992.04.01
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Abstract

Tungsten film was deposited on the TiN surface in a low pressure chemical vapor deposition reactor and chemical reaction mechanism between TiN surface and ($WF_{6}\;and\;SiH_{4}$ was studied. Interaction of ($WF_{6}\;or\;SiH_{4}$ with TiN surface and tungsten was deposited more easily. $WF_6$ reacted with TiN activated the TiN surface to form volatile TiF_4$ and tungsten nuclei were formed. ($SiH_{4}$ was dissociated on the TiN surface to form silicon nuclei. From RBS and AES analysis, we could not detect the impurities(such as Si or TiF$_x$)at the interface between tungsten and TiN. The adhesion at the W/TiN interface became poor when the deposition temperature was below 275$^{\circ}C$.

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