한국진공학회지 (Journal of the Korean Vacuum Society)
- 제1권1호
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- Pages.121-125
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- 1992
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- 1225-8822(pISSN)
$CsX^+$ (X=Al, Ga, As) 분자이온을 이용한 SIMS의 정량분석
The Detection of Molecular Ion $CsX^+$ (X=Al, Ga, As) for Quantitative SIMS Analysis
초록
Secondary Ion Mass Spectrometry (SIMS) is widely known as highly sensitive a surface analysis technique. Efforts for quantification have been hindered, however, by the presence of matrix effects. Here we describe a new technique for the quantitative analysis of AlxGa1-xAs. Instead of Al+, Ga+, As+ ions, CsX+ ions (X=Al, Ga, As) have been detected. Intensity of these molecular ions appears to be much less affected by matrix effects. We have successfully accomplished the compositional analysis with standard deviation better than 2 percent.
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