초록
The batches having excess SiO2 to tetrasilicic mica KMg2.5 (Si4O10)F2 were melted at 1450℃. The fabricated samples were heat-treated for the nucleation and the crystallization. The crystallized samples were investigated on several properties. The tetrasilicic mica composition with excess 10 wt% SiO2 was successful both in glassifying and in crystallizing. The optimum temperatures for the nucleation and the crystallization were 680℃ and 1000-1100℃, respectively. The mica and the cristobalite crystallines were identified after heat-treatment. The properties of the samples processed appropriately were as follows, bulk density 2.64g/㎤, thermal expansion coefficient ∼80×10-7/℃, Vicker's hardness ∼105 Kgf/㎟, bending strength ∼666Kgf/㎟, dielectric constant ∼11.1, tan δ 2.5%, volume resistivity 2.35×107∼1.3×1011{{{{ OMEGA }}cm, surface roughness 6.984㎛.