대한전기학회논문지 (The Transactions of the Korean Institute of Electrical Engineers)
- 제41권9호
- /
- Pages.1013-1020
- /
- 1992
- /
- 0254-4172(pISSN)
펄스파워용 X선제어 무도체스위치의 기본연구
A Basic Study on X-ray Controlled Semiconductor Switch for Pulse Power
초록
The conductivity variation of a high resistivity bulk silicon semiconductor, whose electrodes were deposited with aluminum vapor, was studied experimentally by measuring the X-ray intensity and current flow, which was developed by X-ray radiation while applying a pulse voltage to the silicon, in a load resistor connected to the semiconductor. The current flow observed immediately as the X-ray radiated, and when the X-ray decreased. It was found from the observation of switching current for the X-ray intensity and the voltage applied in the semiconductor that the switching current of the semiconductor increased as the intensity of the X-ray and the applied voltage increased. In case of lower applied voltage, the switching current for higher applied voltage depended on the intensity of the X-ray radiated due to the saturation of electron and hole.
키워드