대한전기학회논문지 (The Transactions of the Korean Institute of Electrical Engineers)
- 제41권7호
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- Pages.760-765
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- 1992
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- 0254-4172(pISSN)
증착온도가 LPCVD 실리콘 박막의 물성과 전기적 특성에 미치는 영향
Influence of the Deposition Temperature on the Structural and Electrical Properties of LPCVD Silicon Films
초록
The material properties and the TFT characteristics fabricated on SiOS12T substrate by LPCVD using SiHS14T gas were investigated. The deposition rate showed Arrhenius behavior with an activation energy of 31Kcal/mol. And the transition temperature form amorphous to crystalline deposition was observed at 570
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