The Transactions of the Korean Institute of Electrical Engineers (대한전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
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A Novel Schottky Diode with the Self-Aligned Guard Ring

자기정렬된 Guard Ring을 갖는 새로운 쇼트키 다이오드

  • 차승익 (아주대 대학원 전자공학과) ;
  • 조영호 (아주대 대학원 전자공학과) ;
  • 최연익 (아주대 공대 전자공학과)
  • Published : 1992.05.01
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Abstract

Novel A1-Si Schottky diodes with self-aligned guard rings have been proposed and fabricated using RIE(Reactive Ion Etch). The breakdown voltage of the Schottky diode with the guard ring has been drastically increased to 200V or more in comparison with 46V for the metal overlap Schottky diode.

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