대한전기학회논문지 (The Transactions of the Korean Institute of Electrical Engineers)
- 제41권5호
- /
- Pages.573-576
- /
- 1992
- /
- 0254-4172(pISSN)
자기정렬된 Guard Ring을 갖는 새로운 쇼트키 다이오드
A Novel Schottky Diode with the Self-Aligned Guard Ring
초록
Novel A1-Si Schottky diodes with self-aligned guard rings have been proposed and fabricated using RIE(Reactive Ion Etch). The breakdown voltage of the Schottky diode with the guard ring has been drastically increased to 200V or more in comparison with 46V for the metal overlap Schottky diode.